A Simulated Study of 65 nm CMOS 2GHz Front-End Preamplifier Circuit for Optical Fiber Applications

Ruwaida Al-Berwari, Muhammed Hameed Alsheikhjader
{"title":"A Simulated Study of 65 nm CMOS 2GHz Front-End Preamplifier Circuit for Optical Fiber Applications","authors":"Ruwaida Al-Berwari, Muhammed Hameed Alsheikhjader","doi":"10.33899/rjs.2022.175390","DOIUrl":null,"url":null,"abstract":"In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.","PeriodicalId":20803,"journal":{"name":"Rafidain journal of science","volume":"17 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rafidain journal of science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33899/rjs.2022.175390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this research a new design of the transimpedance amplifier (TIA) with the current mirror was employed by the technique (65nm). The TIA consists of a common gate transistor amplifier (CG TIA) and a common source amplifier as an input stage with local active feedback with a second stage of a current mirror and local active feedback to increase gain. In order to verify the performance of the proposed TIA, a circuit simulation was carried out in the LT spice program using coefficients with the technique (65nm CMOS). The simulation results indicate that the interfacial impedance gain is (41 dBΩ) at a bandwidth frequency of (2.0 GHz-3dB) for an input capacitor of (100 fF) and an input referred noise current spectral density of (14 pA/√Hz) and a power consumption value of (0.091 mw) at an applied voltage (1V). The main focus of this research is low consumption of power and voltage compared to another research.
65 nm CMOS 2GHz光纤前端前置放大电路的仿真研究
在本研究中,采用该技术设计了一种新的带电流反射镜的跨阻放大器(TIA) (65nm)。TIA由一个公共栅极晶体管放大器(CG TIA)和一个公共源放大器作为输入级,带有本地有源反馈,第二级是电流镜和本地有源反馈,以增加增益。为了验证所提出的TIA的性能,在LT spice程序中使用该技术(65nm CMOS)的系数进行了电路仿真。仿真结果表明,当输入电容为(100 fF),输入参考噪声电流谱密度为(14 pA/√Hz),输入电压为(1V)时,接口阻抗增益为(41 dBΩ),功耗值为(0.091 mw)。与其他研究相比,本研究的主要重点是低功耗和低电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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