Electrical Characterization of TiO2 based OMEGA FinFET Compared with Conventional SiO2 Material

Abstract

Aim: The aim of the study is to perform the electrical characterization of Innovative TiO2 based Omega FinFET and compare it with SiO2 material by varying the oxide thickness ranging from 1nm to 20nm using nanotechnology. Materials and Methods: DFT tool is used to perform the above characterisation. The method was performed for 20 samples per group, TiO2(n=20) and SiO2(n=20). Same samples were used for both the control group and experimental group. Different values of drain current were obtained by varying the thickness for both TiO2 and SiO2. Result: Drain current was obtained for TiO2 (0.645μA) and found better compared with SiO2 (0.58μA). Conclusion: It is concluded that the TiO2 Omega FinFET appears to be better compared to SiO2 based omega FinFET.