Spin Transport Of Dirac Electrons In Hexagonal Lattice Topological Insulator In The Presence Of Edge Imperfections

Abstract

2D Topological insulators (TIs) possess an unique property of transport of spin edge states which are topologically protected. This phenomenon is explored in details in this paper for random edge imperfections in 2D hexagonal lattice nanoribbon TIs using Non equilibrium greens function (NEGF) formalism. Haldane model has been used for incorporating spin orbit interaction in the device hamiltonian, which is the source of creating topologically protected edge states in these materials.