Theoretical model for fast calculations of the electrical resistivity of thin metallic films with rough surfaces

A. A. Pribylov
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引用次数: 1

Abstract

A model of electron gas scattering at surface inhomogeneities was developed and applied to describe a surface roughness influence on the electrical resistivity of thin metallic films. The model is developed to be simple enough for fast calculations without detailed investigation of surface topology. The film’s shape is assumed to be described by the average thickness, the surface rms, and the correlation length. The scattering mechanism corresponds to electrical potential changes caused by inhomogeneities. It was found that the electrical resistivity of thin films increases with the increase of the roughness of surface for films of any thickness, whereas the law of this effect depends on film’s thickness. Basing on the developed model, formulas for the electrical resistivity as a function of the roughness rms and the correlation length in cases of thick enough, thin, and extremely thin films have been obtained and discussed with comparison to other models already in literature and experimental data.
具有粗糙表面的金属薄膜电阻率快速计算的理论模型
建立了一个表面不均匀的电子气体散射模型,并应用该模型来描述表面粗糙度对金属薄膜电阻率的影响。该模型开发得足够简单,无需详细研究表面拓扑结构即可进行快速计算。假定薄膜的形状由平均厚度、表面均方根和相关长度来描述。散射机制与不均匀性引起的电势变化相对应。对任意厚度的薄膜,其电阻率随表面粗糙度的增加而增大,但其规律与薄膜的厚度有关。基于所建立的模型,得到了足够厚、较薄和极薄薄膜情况下电阻率随粗糙度rms和相关长度的函数表达式,并与文献中已有的模型和实验数据进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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