11 GHz Lateral-Field-Excited Aluminum Nitride Cross-Sectional Lamé Mode Resonator

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI:10.1109/IFCS-ISAF41089.2020.9234874

Meruyert Assylbekova, Guofeng Chen, Giuseppe Michetti, Michele Pirro, L. Colombo, M. Rinaldi

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引用次数: 11

Abstract

This paper reports the first experimental demonstration of a Lateral-Field-Excited (LFE) Aluminum Nitride (AlN) Cross-Sectional Lamé Mode Resonator (CLMR) operating at 11 GHz. First, the device is modeled via Finite Element Analysis (FEA). Next, optimized design is realized via a simple 2-mask fabrication process. Fabricated LFE AlN CLMR demonstrates a loaded quality factor ($Q_{l}$) of 615 and an electromechanical coupling coefficient ($k_{t}^{2}$) of 1.3%, resulting in an exceptionally high Figure-of-Merit ($\text{FoM}=k_{t}^{2}\cdot Q_{l}$) of 8. In addition, the capability to litographycally define the center frequency without significantly degrading its $k_{t}^{2}$ makes LFE ALN CLMRs one of the best candidates for the realization of low-cost yet high-performance filters scaled to operate in the X-band.

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11ghz横向场激发氮化铝横截面lam模谐振器

本文报道了一种工作频率为11 GHz的横向场激发(LFE)氮化铝(AlN)横截面lam模式谐振器(CLMR)的首次实验演示。首先，通过有限元分析(FEA)对该装置进行建模。其次，通过简单的双掩模制造工艺实现优化设计。制备的LFE AlN CLMR的负载质量因子($Q_{l}$)为615，机电耦合系数($k_{t}^{2}$)为1.3%，从而获得了8的超高品质系数($\text{FoM}=k_{t}^{2}\cdot Q_{l}$)。此外，在不显着降低其$k_{t}^{2}$的情况下，平版定义中心频率的能力使LFE ALN CLMRs成为实现x波段低成本高性能滤波器的最佳候选之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

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