Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

I. Capan
{"title":"Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques","authors":"I. Capan","doi":"10.20944/preprints202201.0448.v1","DOIUrl":null,"url":null,"abstract":"In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.20944/preprints202201.0448.v1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC material. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS) and minority carrier transient spectroscopy (MCTS) have led to recent progress in identifying and better understanding of the charge carrier traps in n-type 4H-SiC material.
结合光谱技术研究n型4H-SiC中的多数和少数载流子陷阱
本文综述了n型4H-SiC材料中最常见的多数和少数电荷载流子陷阱。我们重点讨论了结谱技术的不同应用所得到的结果。给出了最常见的结光谱技术背后的基本原理。这些技术,即深能级瞬态光谱(DLTS)、拉普拉斯瞬态光谱(L-DLTS)和少数载流子瞬态光谱(MCTS),在识别和更好地理解n型4H-SiC材料中的载流子陷阱方面取得了最新进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
0.60
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信