Large-area Superconducting Micro-wire Single-photon Detectors Prepared by Laser Direct Writing Lithography

Abstract

We have fabricated MoSi thin films by magnetron sputtering. The zero resistance superconducting transition temperature of 5 nm thin films reaches 4.1 K. Then, by optimizing lithography conditions, micron lines were prepared by laser direct writing lithography. The line width is from1.0 μm to 2.0 μm of the detection region, which the micro-wires have high uniformity in a large area, and the largest photosensitive area is up to 1000×1000 μm2. we preliminarily characterize the performance of the detectors, including I-V characteristics, dark counts, and photon counts rate.