Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

Z. Al-Sharafi, S. Mohyeddine, Samir Osman Mohammed, R. M. Kershi
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引用次数: 1

Abstract

Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crystalline structure was 525°C. The SEM image also showed that the crystallization of the thin films is increased with increasing of annealing temperature. Transmittance and reflectance spectral were used to calculate the absorption coefficient. Two absorption edges in two spectral regions were distinguished according to direct and indirect electron transitions. Energy band gap was calculated by using the Tauc relationship for both direct and indirect electron transitions. The average value of was equal to 0.79 eV and 0.61 eV for direct and indirect transitions, respectively.
真空蒸发法制备锗薄膜的结构和光学性质
利用真空蒸发技术在玻璃基板上沉积锗薄膜。研究了退火温度对锗薄膜结构和光学性能的影响。采用XRD、SEM和UV-Vis技术对薄膜的结构和光学性能进行了表征。XRD结果表明,沉积薄膜的结构由室温下沉积的非晶相转变为高温下沉积的结晶相。获得良好结晶结构的最佳温度为525℃。SEM图像还表明,随着退火温度的升高,薄膜的结晶性增强。利用透射光谱和反射光谱计算吸收系数。根据直接电子跃迁和间接电子跃迁,在两个光谱区区分了两个吸收边缘。利用Tauc关系计算了电子直接跃迁和间接跃迁的能带隙。直接跃迁和间接跃迁的平均值分别为0.79 eV和0.61 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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