N. Siwak, X. Fan, D. Hines, E. Williams, N. Goldsman, R. Ghodssi
{"title":"Chemical sensor utilizing indium phosphide cantilevers and pentacene as a functionalization layer","authors":"N. Siwak, X. Fan, D. Hines, E. Williams, N. Goldsman, R. Ghodssi","doi":"10.1109/MEMSYS.2007.4433111","DOIUrl":null,"url":null,"abstract":"We present a MEMS cantilever waveguide resonator sensing platform utilizing a novel optical readout scheme and the organic semiconductor pentacene as a surface functionalization layer. Detection of vapor by way of mass induced frequency shift is demonstrated. Frequency shifts due to mass absorption of 509 and 236 Hz were measured to plusmn85 Hz corresponding to a sensitivity of plusmn0.507 pg. The III-V Indium Phosphide (InP) material enables passive waveguides and active optical components to be monolithically integrated, yielding single-chip sensors in the future.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"1 1","pages":"489-492"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4433111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We present a MEMS cantilever waveguide resonator sensing platform utilizing a novel optical readout scheme and the organic semiconductor pentacene as a surface functionalization layer. Detection of vapor by way of mass induced frequency shift is demonstrated. Frequency shifts due to mass absorption of 509 and 236 Hz were measured to plusmn85 Hz corresponding to a sensitivity of plusmn0.507 pg. The III-V Indium Phosphide (InP) material enables passive waveguides and active optical components to be monolithically integrated, yielding single-chip sensors in the future.