Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage

Abstract

We demonstrate, for the first time, the excellent linearity characteristics of AlGaN/GaN HEMTs at drain bias voltages up to 30 V, class AB operation, at 1.9 GHz. AlGaN/GaN HEMTs with a drain periphery of 1 mm, grown on SiC substrates, exhibit a third-order intermodulation distortion (IM3) of -34.7 dBc for an output power level of 26 dBm, 8 dB back-off from saturation power (Psat), at drain bias voltage of 30 V. Furthermore, we will show the linearity characteristics dependence on Vds and describe that superior linearity profile can be obtained with AlGaN/GaN HEMTs at high drain voltage bias.