Performance Simulation of GaN SBD With Different Structures

Abstract

In order to study the performance of GaN schottky barrier diodes (SBD) with different structures, the forward and reverse characteristics of GaN SBD with original, hybrid anode and gate controlled edge terminal (GET) are simulated, and the effects of the structural parameters of each device on the electrical characteristics are compared. The simulation results show that the turn-on voltage of hybrid anode GaN SBD is the lowest (0.74V),The forward current is the largest, the breakdown voltage is in the middle. The turn-on voltage of GET GaN SBD is in the middle, and the forward current is lower than that of original structure, but the breakdown voltage is the highest, reaching 1586V. Comprehensively considered, the performance of GET GaN SBD is the best.