A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103) Pub Date : 2000-06-15 DOI:10.1109/VLSIC.2000.852881

H.H. Kim, S. Chandrasekhar, C. Burrus, J. Bauman

引用次数: 2

Abstract

A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.

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一种用于10gb SONET接收机的Si BiCMOS跨阻抗放大器

介绍了一种集成了InP PIN光电二极管的跨阻抗放大器，用于10gb SONET接收机。并联反馈反阻抗放大器采用0.25 /spl mu/m模块化Si BICMOS技术制作。反馈电阻为870 /spl ω /，带宽为8.5 GHz。该反阻抗放大器在10gb /s时的灵敏度为- 17dbm，误码率为10/sup -12/，伪随机位为2/sup 31/-1。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)

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