Yong Kyu Lee, Yoonjong Song, Joochan Kim, Sechung Oh, B. Bae, SangHumn Lee, Junghyuk Lee, U. Pi, B. Seo, H. Jung, Kilho Lee, Hyunchul Shin, H. Jung, Mark Pyo, A. Antonyan, Daesop Lee, Sohee Hwang, D. Jang, Yongsung Ji, Seungbae Lee, Jung-Pil Lim, K. Koh, K. Hwang, H. Hong, K. Park, G. Jeong, J. Yoon, E. Jung
{"title":"Embedded STT-MRAM in 28-nm FDSOI Logic Process for Industrial MCU/IoT Application","authors":"Yong Kyu Lee, Yoonjong Song, Joochan Kim, Sechung Oh, B. Bae, SangHumn Lee, Junghyuk Lee, U. Pi, B. Seo, H. Jung, Kilho Lee, Hyunchul Shin, H. Jung, Mark Pyo, A. Antonyan, Daesop Lee, Sohee Hwang, D. Jang, Yongsung Ji, Seungbae Lee, Jung-Pil Lim, K. Koh, K. Hwang, H. Hong, K. Park, G. Jeong, J. Yoon, E. Jung","doi":"10.1109/VLSIT.2018.8510623","DOIUrl":null,"url":null,"abstract":"We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260°C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"10 1","pages":"181-182"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
Abstract
We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260°C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
