Nanowire phase change memory with carbon nanotube electrodes

F. Xiong, M. Bae, Yuan Dai, A. Liao, A. Behnam, E. Carrion, Sungduk Hong, D. Ielmini, E. Pop
{"title":"Nanowire phase change memory with carbon nanotube electrodes","authors":"F. Xiong, M. Bae, Yuan Dai, A. Liao, A. Behnam, E. Carrion, Sungduk Hong, D. Ielmini, E. Pop","doi":"10.1109/DRC.2012.6257011","DOIUrl":null,"url":null,"abstract":"Phase change material (PCM) nanowires (NWs) that are self-aligned with carbon nanotube (CNT) electrodes that achieves a switching currents of the order ~1 μA, over two orders of magnitude below industrial state of the art, is described. The programming currents, ~0.1 μA SET, ~1.6 μA RESET, and power dissipation of the fabricated self-aligned PCM NW devices are among the lowest reported to date. The nanopatterning method used can be applied to probe other nanomaterials by automatically aligning them with CNT electrodes.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"46 1","pages":"215-216"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Phase change material (PCM) nanowires (NWs) that are self-aligned with carbon nanotube (CNT) electrodes that achieves a switching currents of the order ~1 μA, over two orders of magnitude below industrial state of the art, is described. The programming currents, ~0.1 μA SET, ~1.6 μA RESET, and power dissipation of the fabricated self-aligned PCM NW devices are among the lowest reported to date. The nanopatterning method used can be applied to probe other nanomaterials by automatically aligning them with CNT electrodes.
碳纳米管电极纳米线相变存储器
描述了一种与碳纳米管(CNT)电极自对准的相变材料(PCM)纳米线(NWs),其开关电流约为1 μA,比目前的工业水平低两个数量级。该器件的编程电流、~0.1 μA SET、~1.6 μA RESET和功耗均为迄今为止报道的最低。所使用的纳米图像化方法可以通过自动对准碳纳米管电极来探测其他纳米材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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