In-Situ Redox Nanowelding of Copper Nanowires with Surficial Oxide Layer as Solder for Flexible Transparent Electromagnetic Interference Shielding

Xianwen Liang, Jianwen Zhou, Gang Li, T. Zhao, Pengli Zhu, R. Sun, C. Wong
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引用次数: 1

Abstract

Silver nanowire (AgNW) transparent electrode stands out as a promising candidate to replace indium tin oxide (ITO), whereas the high cost and electromigration of silver ions overshadow the applications of AgNWs in optoelectronics. Copper nanowire (CuNW) is attracting increasing interest and attentions due to its high intrinsic electrical conductivity, earth abundance and lower prince, but the oxidation of CuNW severely prohibits its practical applications, which is an issue to be solved urgently. Herein, nanowelding of CuNWs is achieved via an in-situ redox approach. In this welding process, the copper oxide on the surface of CuNWs as a natural solder is reduced by sodium borohydride (NaBH4) to generate Cu atoms, which selectively aggregate at the intersection of CuNWs and merge the junction owing to the positive site here. The sheet resistance of welded CuNW (W-CuNW) transparent conducting films drop obviously without sacrificing its transmittance, which thereby significantly promotes the optoelectronic performance of the film. Poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) as a protective layer is coated onto the W-CuNW film to prepare PEDOT:PSS/W-CuNW film. The optoelectronic properties of the PEDOT:PSS/W-CuNW film show excellent stability in ambient atmosphere for 30 days. Beside, no obvious change in the sheet resistance of the PEDOT:PSS/W-CuNW film is observed after 5000 bending cycles under a bending radius of 2 mm, indicating the outstanding mechanical flexibility. Finally, electromagnetic interference (EMI) shielding effectiveness (SE) of the PEDOT:PSS/W-CuNW film is measured within the frequency range from 8.2 GHz to 12.5 GHz. The PEDOT:PSS/W-CuNW film with a EMI SE value above 27 dB and transmittance of 85% underlines the great potential applications in displays, touch panels, airborne optoelectronic pods and aviation camcorders.
以表面氧化层为焊料的铜纳米线的原位氧化还原纳米焊接柔性透明电磁干扰屏蔽
银纳米线(AgNW)透明电极是取代氧化铟锡(ITO)的一种有前途的候选电极,但银离子的高成本和电迁移使其在光电子学中的应用蒙上了阴影。铜纳米线(cuw)因其固有电导率高、含土丰度高、prince低等优点而日益受到人们的关注和重视,但铜纳米线的氧化严重阻碍了其实际应用,这是一个亟待解决的问题。本文通过原位氧化还原方法实现了CuNWs的纳米焊接。在该焊接过程中,作为天然焊料的铜氧化物在cunw表面被硼氢化钠(NaBH4)还原生成Cu原子,Cu原子选择性地聚集在cunw的交叉处,并由于这里的正电荷而合并结。在不牺牲透光率的情况下,焊接的CuNW透明导电膜的片阻明显下降,从而显著提高了薄膜的光电性能。将聚(3,4-乙烯二氧噻吩)/聚苯乙烯磺酸盐(PEDOT:PSS)作为保护层涂覆在W-CuNW薄膜上,制备了PEDOT:PSS/W-CuNW薄膜。PEDOT:PSS/W-CuNW薄膜的光电性能在环境气氛中表现出30天的优异稳定性。在2 mm的弯曲半径下,PEDOT:PSS/W-CuNW薄膜在5000次弯曲循环后,其片电阻无明显变化,表明其具有优异的机械柔韧性。最后,在8.2 GHz ~ 12.5 GHz频率范围内测量了PEDOT:PSS/W-CuNW薄膜的电磁干扰屏蔽效能(SE)。PEDOT:PSS/W-CuNW薄膜的EMI SE值超过27 dB,透射率为85%,在显示器,触摸面板,机载光电舱和航空摄像机方面具有巨大的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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