A novel inverse-magnetostrictive type pressure sensor with planar sensing inductor

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan) Pub Date : 2013-03-07 DOI:10.1109/MEMSYS.2013.6474335

H.C. Chang, S. Liao, H. Hsieh, S. Lin, C. Lai, R. Chen, W. Fang

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引用次数: 4

Abstract

In this study, a novel planar inductor to detect the pressure sensor is proposed. The planar inductor consists of planar coil and CoFeB films. The proposed sensor exploits the inverse-magnetostriction effect to change the permeability of the CoFeB film by pressure load. This permeability variation will further result in the inductance difference of the planar inductor. Consequently the relationship between the pressure and inductance can be obtained by the inductance measurement. To demonstrate the presented concept, prototype inverse-magnetostrictive type pressure sensors with planar sensing inductor (Al planar coil and CoFeB films) have been implemented and tested. Sensitivity measurements show the gauge factor of the novel pressure sensor is approximate 280. To support the proposed concept, the vibrating sample magnetometer (VSM) measurements show the magnetic anisotropy of the CoFeB film (extracted from the hysteresis loops) is changed due to the applied pressure load.

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一种新型平面感应式反磁致伸缩压力传感器

在本研究中，提出了一种新的平面电感来检测压力传感器。平面电感由平面线圈和CoFeB薄膜组成。该传感器利用反磁致伸缩效应在压力载荷作用下改变CoFeB薄膜的磁导率。这种磁导率的变化将进一步导致平面电感的电感差异。因此，可以通过电感测量得到压力与电感之间的关系。为了证明所提出的概念，采用平面传感电感(Al平面线圈和CoFeB薄膜)的反磁致伸缩型压力传感器原型已经实现并进行了测试。灵敏度测量表明，该新型压力传感器的测量系数约为280。为了支持所提出的概念，振动样品磁强计(VSM)测量表明，CoFeB薄膜的磁各向异性(从磁滞回线中提取)由于施加的压力载荷而发生变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)

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