Minhua Lu, S. Wright, Gerard McVicker, S. M. Sri-Jayantha
{"title":"Effect of Joule heating on electromigration reliability of Pb-free interconnect","authors":"Minhua Lu, S. Wright, Gerard McVicker, S. M. Sri-Jayantha","doi":"10.1109/ECTC.2012.6248890","DOIUrl":null,"url":null,"abstract":"Temperature and current are two major parameters that impact electromigration reliability. Due to the large current used in the accelerated electromigration test, the Joule self-heating associated with the stress current can be significant. The paper presents a study of electromigration fails in Pb-free interconnect from the point of view of localized Joule heating. The Joule heating effect in two types of packages, a fully assembled flip chip module with standard C4s and a silicon to silicon assembly with microbumps, is considered. A thermal FEM model is used as a guide to interpret the experimental observations.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 62nd Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2012.6248890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Temperature and current are two major parameters that impact electromigration reliability. Due to the large current used in the accelerated electromigration test, the Joule self-heating associated with the stress current can be significant. The paper presents a study of electromigration fails in Pb-free interconnect from the point of view of localized Joule heating. The Joule heating effect in two types of packages, a fully assembled flip chip module with standard C4s and a silicon to silicon assembly with microbumps, is considered. A thermal FEM model is used as a guide to interpret the experimental observations.