Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling

Abstract

Moore’s law is approaching its limit due to various challenges, especially the size limit of the transistors. The International Roadmap for Devices and Systems (IRDS), the successor of International Technology Roadmap for Semiconductors (ITRS), has included 2D materials as an alternative approach for the More-than-Moore nanoelectronic applications. Among the 2D materials, graphene nanoribbons (GNRs) have been widely used as the alternative channel materials of field-effect transistors (FETs). In this paper, the impacts of physical scaling on the device performance of double-gate Schottky-barrier GNR FETs (DG-SB-GNRFETs) are investigated by using NanoTCAD ViDES simulation tool based on the tight-binding Hamiltonian and self-consistent solutions of 3D Poisson and Schrödinger equations with open boundary conditions within the nonequilibrium Green’s function formalism. The extracted device performance parameters include the subthreshold swing and on-to-off current ratio. The results suggest that the performances of DG-SB-GNRFETs are strongly dependent on their physical parameters, especially the widths of the GNRs.