A brief overview of atomic layer deposition and etching in the semiconductor processing

Guangjie Yuan, Ning Wang, Shirong Huang, Johan Liu
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引用次数: 8

Abstract

Atomic layer deposition (ALD) and atomic layer etching (ALE) are two important techniques in the semiconductor processing, which focus ultra-thin film deposition and etching, respectively. Both of them have the self-limiting surface behavior, and could realize the atomic-scale fidelity in the deposition and etching processes. Unlike traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD has good step coverage, atomic-scale thickness controllability, and composition uniformity at low growth temperature. Compared with traditional continuous-wave plasma etching, ALE has smooth surface, excellent depth uniformity and atomic-scale thickness controllability. In this review, their fundamental and applications have been discussed.
简述半导体加工中的原子层沉积和蚀刻
原子层沉积(ALD)和原子层刻蚀(ALE)是半导体加工中的两种重要技术,分别是超薄膜沉积和刻蚀的研究热点。这两种材料都具有自限制表面行为,在沉积和蚀刻过程中都能实现原子尺度的保真度。与传统的化学气相沉积(CVD)和物理气相沉积(PVD)不同,ALD具有良好的台阶覆盖、原子尺度的厚度可控性和低温下的成分均匀性。与传统的连续波等离子体刻蚀相比,ALE具有表面光滑、深度均匀性好和原子尺度厚度可控性等优点。本文综述了它们的基本原理和应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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