Quantum Drift-Diffusion and Quantum Energy Balance simulation of nanowire junctionless transistors

Abstract

Multiple gate MOSFETs (MuGFET) have gained significant attention as the scaling of the conventional MOSFET comes to an end. Of the possible architectures, the gate-all-around nanowire (NW) transistor offers the best gate control over the channel. In order to model GAA nanowire devices for channel lengths less than 10nm, while preserving a connection to the drift-diffusion framework familiar to device engineers, we have developed a quantum-corrected transport simulator that includes Quantum Drift-Diffusion (QDD) and Quantum Energy Balance (QEB). This formalism is applied to the example of the NW junctionless transistor (JLT), an interesting modification to the NW-MOSFET obtained by replacing the n+-p-n+ structure by a bar of n+ region, that promises smaller variability.