Double layer nanopore fabricated by FIB and TEM

Abstract

In order to support the third generation DNA sequencing technique, a double layers nanopore consisting of silicon nitride (Si3N4) and graphene is fabricated in this paper. Firstly, high yield Si3N4 nanofilm chips were manufactured successfully after SißNt deposition, etching and release process. Then, focused ion beam (FIB) was used to manufacture SißNi nanopore on Si3N4 nanofilm chips with optimized process. The graphene sheet was synthesized with chemical vapor deposition (CVD) method and transferred onto the Si3N4 membrane milling area. We use transmission electron microscope (TEM) to fabricate the nanopore in the graphene membrane above the center of the Si3N4 nanopore. The diameter of SißNt layer was characterized to be 28 nm and the diameter of graphene nanopore was 4 nm which is fabricated by FIB and electron beam respectively. This method provides a useful tool to nanopore-based DNA sequence.