Room temperature THz detection and emission with semiconductor nanodevices

2013 Spanish Conference on Electron Devices Pub Date : 2013-02-01 DOI:10.1109/CDE.2013.6481381

J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn

引用次数: 1

Abstract

In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.

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半导体纳米器件的室温太赫兹探测与发射

在本文中，我们介绍了在欧洲ROOTHz项目框架内获得的太赫兹发射器和探测器的制造进展。研究了两种类型的器件，自开关二极管和缝隙二极管，使用窄带隙和宽带隙半导体。这种广泛的方法使我们能够提高Gunn二极管产生的频率和功率，以及探测器在太赫兹频率下的响应性和噪声。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 Spanish Conference on Electron Devices

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