Hydrogen Incorporation in Semiconductors

Abstract

In many materials, the presence of hydrogen influences the structural and electronic properties. An equilibrium model based on statistical mechanics is presented that describes the unintentional incorporation of hydrogen. As an example, the H concentration in four different semiconductors, namely, c‐Si, c‐Ge, ZnO, and β‐Ga2O3, is measured using H effusion. The measured H concentration ranges from 5.2×1016 to 1.1×1018  cm −3 . From the effusion data, the position of the H chemical potential and the H binding energies are derived.