N. Sato, G. Allen, William P. Benson, B. Buford, Atreyee Chakraborty, M. Christenson, T. Gosavi, P. Heil, N. Kabir, B. Krist, K. O’Brien, K. Oguz, Rohan Patil, J. Pellegren, A. Smith, E. S. Walker, P. Hentges, M. Metz, M. Seth, B. Turkot, C. Wiegand, H. Yoo, I. Young
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引用次数: 12
Abstract
This paper demonstrates a CMOS compatible process integration of spin-orbit torque (SOT) device with a unique bilayer SOT bottom electrode. An effective spin-Hall angle of 0.27, a median tunneling magneto-resistance ratio of 127% at electrical CD of 57 nm, and a 96% resistance-based MTJ yield on 300 mm scale were achieved. We experimentally validated the two-pulse field-free SOT switching scheme with spin-transfer torque assist at 10ns. Unlike conventional field-free SOT switching schemes, the demonstrated scheme adds no complexity to process integration.
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