High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source

Abstract

Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 /spl mu/m thick GaAs separate confinement layer.