Роль BiPO4, вводимого через газовую фазу, в процессе создания тонких пленок на поверхности InP

Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases Pub Date : 2019-06-14 DOI:10.17308/KCMF.2019.21/759

V. F. Kostryukov, I. Y. Mittova, B. V. Sladkopevtsev, A. S. Parshina, Dar’ya S. Balasheva

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Методами инфракрасной спектроскопии, локального рентгеноспектрального микроанализа и рентгенофазового анализа установлен состав пленок на поверхности InP, основными компонентами которого являются различные фосфаты индия \n \n \nREFERENCES \n \nWager J. F., Wilmsen C. W. Thermal oxidation of InP. Appl. Phys., 1980, v. 51(1), pp. 812–814. https://doi.org/10.1063/1.327302 \nYamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide fi lm. Appl. Phys., 1980, v. 5(9), pp. 5007–5012. https://doi.org/10.1063/1.3283803. Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) \nMittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) \nMinaychev V. Ye. Naneseniye plonok v vakuume. [Film deposition in vacuum]. Moscow, Vyssh. Shkola Publ., 1989, 130 p. (in Russ.) \nNikitin M. M. Tekhnologiya i oborudovaniye vakuumnogo napyleniya [Technology and equipment for vacuum deposition]. Moscow, Metallurgiya Publ., 1992, 112 p. (in Russ.) \nVeselov A. A., Veselov A. G., Vysotsky S. L., Dzhumaliyev A. S., Filimonov Yu. A. Magnetic properties of thermally deposited Fe/GaAs (100) thin fi lms. J Technical Physics, 2002, v. 47(8), pp. 1067–1070. https://doi.org/10.1134/1.1501694 \nDanilin B. S. Magnetronnyye raspylitel’nyye sistemy [Magnetron Spray Systems]. Moscow, Radio i svyaz’ Publ., 1982, 72 p. \nPulver D., Wilmsen C.W. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Vac. Sci. Technol. B., 2001, v. 19(1), pp. 207–214. https://doi.org/10.1116/1.1342008 \nPunkkinen M. P. J., Laukkanen P., Lеng J., Kuzmin M., Tuominen M., Tuominen V., Dahl J., Pessa M., Guina M., Kokko K., Sadowski J., Johansson B., Väyrynen I. J., Vitos L. Oxidized In-containing III–V(100) surfaces: Formation of crystalline oxide fi lms and semiconductor-oxide interfaces. Physical review, 2011, v. 83(19), pp. 195–329. https://doi.org/10.1103/Phys-RevB.83.195329 \nSladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Dontsov A. I., Pelipenko D. I. On the thermal oxidation of VxOy–InP heterostructures formed by the centrifugation of vanadium (V) oxide gel. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, v. 10(2), pp. 335–340. https://doi.org/10.1134/S102745101602018X \nNingyi Y. Comparison of VO2 thin fi lms prepared by inorganic sol-gel and IBED methods. Appl. Phys. A., 2003, v. 78. pp. 777–780. https://doi.org/10.1007/s00339-002-2057-5 \nHerman M. A., Sitter H. Epitaxy: Fundamentals and Current Status. Heidelberg, Springer Science & Business Media, 2013, 382 p. \nManijeh R. The MOCVD Challenge: A survey of GaInAsP–InP and GaInAsP–GaAs for photonic and electronic device applications. Boca Raton, CRC Press, 2010, 799 p. https://doi.org/10.1201/9781439807002 \nMittova Ya. Multichannel reactions in chemostimulated oxidation of semiconductors – transit, conjugation, catalysis. Vestnik VGU. Serija: Himija, biologija [Bulletin of the VSU. Series: Chemistry, Biology], 2000, 2, pp. 5–12. (in Russ.) \nMittova Ya. Infl uence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP. Inorganic Materials, 2014, V. 50(9), pp. 874–881. https://doi.org/10.1134/S0020168514090088. \nBrauer G. A. Rukovodstvo po neorganicheskomu sintezu [Inorganic Synthesis Guide]. Moscow, Khimiya Publ., 1985, 360 с. (in Russ.) \nNakamoto K. Infared and Raman Spectra of Inorganic and Coordination Compounds. New York, John Wiley & Sons Ltd, 1986, 335 p. \nAtlas IK-spektrov fosfatov [Atlas IR spectra of phosphates]. by R.YA. Mel’nikovoy. Moscow, Nauka Publ., 1985, 235 p. (in Russ.) \nBrandon D., Kaplan W. Microstructural Characterization of Materials. 2nd Edition, John Wiley & Sons Ltd, 2008, 536 p. https://doi.org/10.1002/9780470727133 \nInternational Center for Diffraction Data. 21. X-ray diffraction date cards, ASTM. \nX-ray diffraction date cards, ASTM. \nKazenas B.K. Termodinamika ispareniya dvoynykh oksidov. [Thermodynamics of double oxide evaporation]. Мoscow, Nauka Publ., 2004, 551 p. 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引用次数: 1

Abstract

Исследованием термооксидирования фосфида индия под воздействием фосфата висмута, вводимого через газовую фазу, установлено ускоряющее воздействие фосфата висмута на процесс формирования пленок. Величина ускорения составляет от 1.5 до 2 раз, и максимальный прирост пленки достигается в первые 10 мин оксидирования. Определяющим процессом является образование фосфата индия за счет вторичного взаимодействия оксидных форм компонентов подложки, лимитируемое диффузией оксидов в твердой фазе. Методами инфракрасной спектроскопии, локального рентгеноспектрального микроанализа и рентгенофазового анализа установлен состав пленок на поверхности InP, основными компонентами которого являются различные фосфаты индия REFERENCES Wager J. F., Wilmsen C. W. Thermal oxidation of InP. Appl. Phys., 1980, v. 51(1), pp. 812–814. https://doi.org/10.1063/1.327302 Yamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide fi lm. Appl. Phys., 1980, v. 5(9), pp. 5007–5012. https://doi.org/10.1063/1.3283803. Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Mittova I. Ya., Borzakova G. V., Terekhov V. A., Mittov O. N, Pshestanchik V. R., Kashkarov V. M. Growth of own oxide layers on indium phosphide. Izvestija AN SSSR. Serija Neorganicheskie Materialy [News of the Academy of Sciences of the USSR. Series Inorganic Materials], 1991, v. 27(10), pp. 2047–2051. (in Russ.) Minaychev V. Ye. Naneseniye plonok v vakuume. [Film deposition in vacuum]. Moscow, Vyssh. Shkola Publ., 1989, 130 p. (in Russ.) Nikitin M. M. Tekhnologiya i oborudovaniye vakuumnogo napyleniya [Technology and equipment for vacuum deposition]. Moscow, Metallurgiya Publ., 1992, 112 p. (in Russ.) Veselov A. A., Veselov A. G., Vysotsky S. L., Dzhumaliyev A. S., Filimonov Yu. A. Magnetic properties of thermally deposited Fe/GaAs (100) thin fi lms. J Technical Physics, 2002, v. 47(8), pp. 1067–1070. https://doi.org/10.1134/1.1501694 Danilin B. S. Magnetronnyye raspylitel’nyye sistemy [Magnetron Spray Systems]. Moscow, Radio i svyaz’ Publ., 1982, 72 p. Pulver D., Wilmsen C.W. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Vac. Sci. Technol. B., 2001, v. 19(1), pp. 207–214. https://doi.org/10.1116/1.1342008 Punkkinen M. P. J., Laukkanen P., Lеng J., Kuzmin M., Tuominen M., Tuominen V., Dahl J., Pessa M., Guina M., Kokko K., Sadowski J., Johansson B., Väyrynen I. J., Vitos L. Oxidized In-containing III–V(100) surfaces: Formation of crystalline oxide fi lms and semiconductor-oxide interfaces. Physical review, 2011, v. 83(19), pp. 195–329. https://doi.org/10.1103/Phys-RevB.83.195329 Sladkopevtsev B. V., Tomina E. V., Mittova I. Ya., Dontsov A. I., Pelipenko D. I. On the thermal oxidation of VxOy–InP heterostructures formed by the centrifugation of vanadium (V) oxide gel. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, v. 10(2), pp. 335–340. https://doi.org/10.1134/S102745101602018X Ningyi Y. Comparison of VO2 thin fi lms prepared by inorganic sol-gel and IBED methods. Appl. Phys. A., 2003, v. 78. pp. 777–780. https://doi.org/10.1007/s00339-002-2057-5 Herman M. A., Sitter H. Epitaxy: Fundamentals and Current Status. Heidelberg, Springer Science & Business Media, 2013, 382 p. Manijeh R. The MOCVD Challenge: A survey of GaInAsP–InP and GaInAsP–GaAs for photonic and electronic device applications. Boca Raton, CRC Press, 2010, 799 p. https://doi.org/10.1201/9781439807002 Mittova Ya. Multichannel reactions in chemostimulated oxidation of semiconductors – transit, conjugation, catalysis. Vestnik VGU. Serija: Himija, biologija [Bulletin of the VSU. Series: Chemistry, Biology], 2000, 2, pp. 5–12. (in Russ.) Mittova Ya. Infl uence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP. Inorganic Materials, 2014, V. 50(9), pp. 874–881. https://doi.org/10.1134/S0020168514090088. Brauer G. A. Rukovodstvo po neorganicheskomu sintezu [Inorganic Synthesis Guide]. Moscow, Khimiya Publ., 1985, 360 с. (in Russ.) Nakamoto K. Infared and Raman Spectra of Inorganic and Coordination Compounds. New York, John Wiley & Sons Ltd, 1986, 335 p. Atlas IK-spektrov fosfatov [Atlas IR spectra of phosphates]. by R.YA. Mel’nikovoy. Moscow, Nauka Publ., 1985, 235 p. (in Russ.) Brandon D., Kaplan W. Microstructural Characterization of Materials. 2nd Edition, John Wiley & Sons Ltd, 2008, 536 p. https://doi.org/10.1002/9780470727133 International Center for Diffraction Data. 21. X-ray diffraction date cards, ASTM. X-ray diffraction date cards, ASTM. Kazenas B.K. Termodinamika ispareniya dvoynykh oksidov. [Thermodynamics of double oxide evaporation]. Мoscow, Nauka Publ., 2004, 551 p. (in Russ.)

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BiPO4的作用是通过气体阶段引入的，通过在InP表面创建薄膜。

通过气体阶段引入的磷酸盐铋对印度磷酸盐的热氧化研究表明，磷酸盐对薄膜形成过程的影响加快。加速度从1.5到2倍不等，胶片的最大增长在前10个氧化阶段达到。一个决定性的过程是印度磷酸盐的产生，通过在固体阶段限制氧化物分量的二级相互作用。红外光谱分析、局部x射线显微分析和x相分析显示了InP表面胶片的组成，其主要成分是印度雷射素J. F。Appl。Phys。1980年，v51 (1)， pp, 812 - 814。https://doi.org/10.1063/1.327302 Yamaguchi M, Ando k热(oxidation of InP and of oxide fi lm。Appl。Phys。1980年，v5 (9)， pp, 5007 - 5012。https://doi.org/10.1063/1.3283803。米托瓦Borzakova g V, Terekhov V. A, Mittov V. N, Kashkarov V. R。伊兹维塔佳SSSR《美国科学学院新闻》(USSR)报道。1991年，v27 (10)， pp, 2047 - 2051。(in Russ。)米托瓦Borzakova g V, Terekhov V. A, Mittov V. N, Kashkarov V. R。伊兹维塔佳SSSR《美国科学学院新闻》(USSR)报道。1991年，v27 (10)， pp, 2047 - 2051。(in Russ。)Minaychev V. YeNaneseniye plonok v vakuume。[vacuum中的电影解码]莫斯科,Vyssh。Shkola Publ。1989年，130 pNikitin M. M. Tekhnologiya i oakuumnogo napyleniya。莫斯科，Metallurgiya Publ。1992年，112个pVeselov A. A. A. G, Vysotsky S. L, Dzhumaliyev A. S.， Filimonov Yu。A. Magnetic特立独行的Fe/GaAs (100) thin fi lms。J技术物理，2002年，v47 (8)， pp, 1067 - 1070。https://doi.org/10.1134/1.1501694 Danilin b . s . Magnetronnyye raspylitel 'nyye sistemy (Magnetron喷雾Systems)。莫斯科，svyaz公共电台。1982年，72个Pulver D, Wilmsen C.W.， In0.5Ga0.5P和In0.5Al0.5P。Vac系统。Sci。Technol。B, 2001, v19 (1)， pp, 207 - 214。https://doi.org/10.1116/1.1342008 Laukkanen Punkkinen M . P . J ., P . Kuzmin M Lеng J。,Tuominen M, Dahl Tuominen V。J。,Pessa M、Guina M。Kokko Sadowski J K, B也是一名网球,Vayrynen一世J Vitos l . Oxidized In - containing III - V (100) surfaces:组of crystalline oxide fi lms and semiconductor - oxide interfaces。物理评论，2011年，v83 (19)， pp, 195 - 329。https://doi.org/10.1103/Phys-RevB.83.195329 Tomina e V V。b . Sladkopevtsev Mittova一世Ya。Dontsov A. I, Pelipenko在vhoy的thermal上，是由oxide gel的V。《Surface investation》杂志。X射线，Synchrotron和Neutron技术，2016年，v10 (2)， pp, 335 - 340。thin fi lms https://doi.org/10.1134/S102745101602018X Ningyi y Comparison of摄氧量prepared by inorganic sol - gel and IBED methods。Appl。Phys。A. 2003年v. 78pp 777 - 780。https://doi.org/10.1007/s00339-002-2057-5 Herman m . A ., ads h . Epitaxy: Fundamentals and感应Status。Heidelberg, Springer科学与商业媒体，2013年，382 p。Boca Raton, CRC Press 2010 799 p . https://doi.org/10.1201/9781439807002 Mittova Ya。在semiconductors中，多通道反应-过境，协作，catalysis。Vestnik VGU。Serija: Himija, biologija。系列:Chemistry, Biology, 2000, 2, pp, 5 - 12。(in Russ。)Mittova Ya。这是一种化学化学的自然状态，也是一种化学化学物质的自然状态。组织物质，2014年，v50 (9)， pp, 874 - 881。https://doi.org/10.1134/S0020168514090088。Brauer G. A. rukovod po neorganichkomu sintezu。莫斯科，Khimiya Publ。1985年360秒Nakamoto K. Infared和Raman Spectra inoranic和Coordination Compounds。纽约，约翰·威利和儿子有限公司，1986年，335 p, Atlas IK-spektrov fosfatov。by R.YA。Mel 'nikovoy。莫斯科，Nauka Publ。1985年，235个p布兰登·D。w, Kaplan Microstructural Characterization of材料。第二版,John Wiley & Sons Ltd ., 2008, 536 p https://doi.org/10.1002/9780470727133 International Center for Diffraction Data 21。X射线数据卡，ASTM。X射线数据卡，ASTM。Kazenas B.K. termodinamiya的dvoynykh oksidov。(双关进化中的thermodynics)。莫斯科，Nauka Publ。2004年551 p

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