Laterally actuated nanoelectromechanical relays with compliant, low resistance contact

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan) Pub Date : 2013-03-07 DOI:10.1109/MEMSYS.2013.6474293

M. Shavezipur, W. S. Lee, K. Harrison, J. Provine, S. Mitra, H. Wong, R. Howe

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引用次数: 8

Abstract

Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties of the relay. This modification improves the on-state resistance (RON) and also provides better stability over a larger number of switching cycles compared to a rigid contact. The results of life-time tests show that the contact resistance increases with the number of switching cycles possibly due to degradation of the contact material. However, flexible contacts show improved contact resistance stability under cyclic contact.

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具有柔顺、低电阻触点的横向驱动纳米机电继电器

提出了具有柔性源漏触点的横向驱动纳米机电继电器。采用原子层沉积法(ALD)在继电器侧壁上涂覆30nm厚的氮化钛(TiN)导电层。通过将继电器的尖端挖空，由薄TiN形成柔性侧壁，从而产生更大的接触面积，从而改善继电器的接触特性。这种改进提高了导通电阻(RON)，并且与刚性接触相比，在更大的开关周期内提供了更好的稳定性。寿命试验结果表明，接触电阻随着开关循环次数的增加而增加，这可能是由于接触材料的退化。然而，在循环接触下，柔性触点表现出更好的接触电阻稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)

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