From 5G to 6G: will compound semiconductors make the difference?

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278253

N. Collaert, A. Alian, A. Banerjee, Vikas Chauhan, R. ElKashlan, B. Hsu, M. Ingels, A. Khaled, K. Vondkar Kodandarama, B. Kunert, Y. Mols, U. Peralagu, V. Putcha, R. Rodriguez, A. Sibaja-Hernandez, E. Simoen, A. Vais, A. Walke, L. Witters, S. Yadav, H. Yu, M. Zhao, P. Wambacq, B. Parvais, N. Waldron

引用次数: 5

Abstract

In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related to III-V upscaling and CMOS co-integration using 3D technologies will be discussed.

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从5G到6G:化合物半导体会产生影响吗?

在这项工作中，我们将解决III-V/CMOS混合技术用于下一代无线通信的机会，超越5G，移动到100GHz以上的工作频率。将讨论与III-V级升级和使用3D技术的CMOS协整相关的挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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