Structural and electrical properties of tin oxide films deposited by SILAR and spin coating techniques

R. Sreekrishnan, S. Karthika, N. S. Roshima, V. Rakhesh
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引用次数: 2

Abstract

Tin oxide (SnO2) thin films are widely used in optoelectronic devices and solar cells as transparent conducting electrodes. The performance of such devices highly depends on the conductivity of tin oxide electrodes without compromising on the transmission in the desired optical region. So it is important to improve the conductivity of tin oxide thin films used as electrodes. In this work, the electrical and structural properties of SnO2 films deposited on glass substrates by Successive Ionic Layer Adsorption and Reaction (SILAR) and Spin methodology at room temperature is reported. By spin coating, the samples were deposited on glass substrates using Tin chloride in ethanol as the precursor at 1200rpm, at different concentrations. The deposited samples were annealed at 450°C for different annealing times. By the same time SnO2 films deposited on glass substrates by SILAR method using tin chloride in distilled water as the starting solution for different concentration. The samples obtained after deposition were annealed 450°C for 2 hours. Electrical conductivity measurements were done for the samples deposited by both methods and I-V characteristics for the films are plotted. For both methods, the sample prepared at 0.1M concentration and annealed for 2hrs at 450°C showed maximum conductivity retaining good transmission. And also it was found that the sample prepared by SILAR method showed least sheet resistance of the order of 141kΩ. The thickness of the optimised films were determined using Ellipsometry and was found to be 263nm. The structural features of the samples were analysed using X-ray diffraction and Fourier transform Infrared spectroscopy. The XRD analysis revealed that the optimised samples have peaks comparable with the standard tin oxide data and is closer for the samples deposited by spin coating method. The FTIR analysis also suggested absorption corresponding to standard absorption peaks of crystalline Tin Oxide. It is found that SILAR is a better method for film deposition as it could attain small thickness with better conductivity.Tin oxide (SnO2) thin films are widely used in optoelectronic devices and solar cells as transparent conducting electrodes. The performance of such devices highly depends on the conductivity of tin oxide electrodes without compromising on the transmission in the desired optical region. So it is important to improve the conductivity of tin oxide thin films used as electrodes. In this work, the electrical and structural properties of SnO2 films deposited on glass substrates by Successive Ionic Layer Adsorption and Reaction (SILAR) and Spin methodology at room temperature is reported. By spin coating, the samples were deposited on glass substrates using Tin chloride in ethanol as the precursor at 1200rpm, at different concentrations. The deposited samples were annealed at 450°C for different annealing times. By the same time SnO2 films deposited on glass substrates by SILAR method using tin chloride in distilled water as the starting solution for different concentration. The samples obtained after deposition...
SILAR和自旋镀膜技术沉积氧化锡薄膜的结构和电性能
氧化锡(SnO2)薄膜作为透明导电电极广泛应用于光电器件和太阳能电池中。这种器件的性能高度依赖于氧化锡电极的导电性,而不影响期望光学区域的传输。因此,提高作为电极的氧化锡薄膜的导电性是十分重要的。本文报道了用连续离子层吸附和反应(SILAR)和自旋方法在室温下沉积在玻璃衬底上的SnO2薄膜的电学和结构特性。采用自旋镀膜的方法,在不同浓度的乙醇中以氯化锡为前驱体,在1200rpm的转速下将样品沉积在玻璃衬底上。将沉积的样品在450℃下进行不同退火时间的退火。同时,以不同浓度的氯化锡为起始溶液,用SILAR法在玻璃衬底上沉积SnO2薄膜。将沉积后得到的样品450℃退火2小时。对两种方法沉积的样品进行了电导率测量,并绘制了薄膜的I-V特性。在这两种方法中,样品在0.1M浓度下制备,在450°C下退火2h,显示出最大的电导率,并保持了良好的透射性。同时发现,用SILAR法制备的样品具有最小的片状电阻,其量级为141kΩ。利用椭偏法测定了优化膜的厚度为263nm。利用x射线衍射和傅里叶变换红外光谱分析了样品的结构特征。XRD分析表明,优化后的样品的峰与标准氧化锡数据相当,与自旋镀膜法沉积的样品更接近。FTIR分析还发现了与晶体氧化锡的标准吸收峰相对应的吸收峰。发现SILAR是一种较好的薄膜沉积方法,因为它可以获得较小的厚度和较好的导电性。氧化锡(SnO2)薄膜作为透明导电电极广泛应用于光电器件和太阳能电池中。这种器件的性能高度依赖于氧化锡电极的导电性,而不影响期望光学区域的传输。因此,提高作为电极的氧化锡薄膜的导电性是十分重要的。本文报道了用连续离子层吸附和反应(SILAR)和自旋方法在室温下沉积在玻璃衬底上的SnO2薄膜的电学和结构特性。采用自旋镀膜的方法,在不同浓度的乙醇中以氯化锡为前驱体,在1200rpm的转速下将样品沉积在玻璃衬底上。将沉积的样品在450℃下进行不同退火时间的退火。同时,以不同浓度的氯化锡为起始溶液,用SILAR法在玻璃衬底上沉积SnO2薄膜。沉积后得到的样品…
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