III/V-on-bulk-Si technology for commercially viable photonics-integrated VLSI

Dongjae Shin, H. Byun, Dongshik Shim, J. Cha, Yonghwack Shin, C. Shin, Chang-Bum Lee, Eunkyung Lee, Bongyong Jang, Jisan Lee, Inoh Hwang, Jinmyoung Kim, Kyunghyun Son, K. Ha, H. Choo
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引用次数: 2

Abstract

We have demonstrated a complete set of on-chip Si-photonic components using our III/V-on-bulk-silicon (Si) technology. Our bulk-Si-based technology shows unrivaled CMOS compatibility and much improved thermal dissipation, leading to superior performance over the III/V-on-SOI technology at a fraction of cost. The components demonstrated on the bulk-Si platform include single & tunable wavelength laser diodes, semiconductor optical amplifiers, Ge & III/V photodiodes, modulators, waveguides, and couplers. Fabrication of Si-photonics components are all carried out on the same bulk wafers that will host CMOS ICs, and all the fabricated components show robust performance in experimental characterizations. Using these bulk-Si components, a solid-state beam scanner for the light detection and ranging (LiDAR) system is currently under development. The III/V-on-bulk-Si technology will open a new path for silicon photonics to share and enjoy the colossal infrastructure and remarkable commercial success of the CMOS technology in coming years.
用于商业可行的光子集成VLSI的III/V-on-bulk-Si技术
我们已经展示了一套完整的片上硅光子元件,使用我们的III/ v -on-bulk silicon (Si)技术。我们的基于si的大块技术具有无与伦比的CMOS兼容性和大大改善的散热性能,比III/V-on-SOI技术性能更优,成本更低。在大块硅平台上演示的组件包括单波长和可调谐波长激光二极管、半导体光放大器、Ge和III/V光电二极管、调制器、波导和耦合器。硅光子元件的制造都是在相同的大块晶圆上进行的,这些晶圆将承载CMOS ic,并且所有制造的元件在实验表征中都显示出强大的性能。使用这些大块硅组件,一种用于光探测和测距(LiDAR)系统的固态光束扫描仪目前正在开发中。III/ v -on-bulk si技术将为硅光子学开辟一条新的道路,在未来几年分享和享受CMOS技术的巨大基础设施和显著的商业成功。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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