Breakthroughs in chip embedding technologies leading to the emergence of further miniaturised system-in-packages

D. Manessis, L. Boettcher, A. Ostmann, S. Karaszkiewicz, H. Reichl
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引用次数: 4

Abstract

allows a very high degree of miniaturization by stacking multiple layers of embedded thin components. This paper shows the realisation of embedded chip QFN-packages (Quad Flat No-Lead) with a size of 10mmx10mm which were manufactured at prototype level at 10„x14„ panels. The embedded chip in the package has a pad pitch of 100µm and the resultant QFN package has a total number of 84I/Os at 400µm footprint pitch. State-of-the-art developments in semi-additive processes by employment of laserdirect- imaging technology (LDI) have demonstrated very fine 18µm lines with 10µm space between them for the final package copper routing. The work in this paper provides evidence for chip embedding capability at very fine chip pad pitch of 100µm and discusses the technology limits. The present work at research prototype level frames the main activities in the EU-Hermes project towards the industrialisation of chip embedding technologies.
芯片嵌入技术的突破导致进一步小型化系统级封装的出现
通过堆叠多层嵌入式薄组件,实现非常高的小型化程度。本文展示了尺寸为10mmx10mm的嵌入式芯片qfn封装(Quad Flat No-Lead)的实现,该封装在10“x14”面板的原型水平上制造。封装中的嵌入式芯片的焊盘间距为100 μ m,由此产生的QFN封装在400 μ m占地间距下具有84I/ o总数。采用激光直接成像技术(LDI)的半增材工艺的最新发展已经展示了非常精细的18微米线,它们之间的空间为10微米,用于最终封装铜布线。本文的工作提供了在极细的芯片衬垫间距为100µm时芯片嵌入能力的证据,并讨论了技术限制。目前在研究原型水平的工作框架的主要活动在欧盟赫尔墨斯项目对芯片嵌入技术的工业化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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