Next Generation of 2-7 Micron Ultra-Small Microvias for 2.5D Panel Redistribution Layer by Using Laser and Photolithography Technologies

Fuhan Liu, Chandrasekharan Nair, Gaurav Khurana, A. Watanabe, Bartlet H. Deprospo, A. Kubo, C. Lin, T. Makita, Naoki Watanabe, R. Tummala
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引用次数: 11

Abstract

Microvia is the vertical interconnect structure for multi-layer redistribution layers (RDLs) in high-density interconnect (HDI) printed circuit boards (PCBs), HDI package substrates, 2.5D interposers and fan-out packages. Three technologies such as photolithography, UV laser and excimer laser have been used to form small microvias (≤ 20 µm diameter) in polymer dielectrics. All the three above mentioned technologies are studied and compared in the work presented in this paper. Photovia was first introduced by IBM for Surface Laminar Circuit technology and it has scaled down from 125 µm then to below 10 µm today. The smallest photovia demonstrated is 2 µm in diameter by using 365 nm photolithography in 5 µm thick TOK photo-imageable dielectric (PID) (IF4605) film. Photovias of 3 µm diameter were also demonstrated in 5 µm thick Taiyo Ink dielectric dry film material (PDM) which passed 1,500 thermal cycles (-55 C to 125 C). The limitation of photovia technology is the availability and cost of photo-sensitive dielectric materials with the required electrical, mechanical, thermal and chemical properties. The state-of-the-art microvia diameter is 20 µm by using conventional high-speed UV laser technologies. Multi-layer RDL with microvias and trenches of 4 µm feature sizes are simultaneously fabricated in a 7 µm thick Ajinomoto Build-up Film (ABF) with small fillers by using excimer laser and passed 1,000 thermal cycles (-55 C to 125 C). This paper demonstrates a novel picosecond UV laser technology to push the limits of low-cost UV laser technology by optimizing laser parameters and dielectric materials. The Cornerstone picosecond UV laser tool from ESI is capable of producing output power of 16W at 355 nm wavelength. The pulse duration is 5 ps which minimizes the heat-affected zone of polymer dielectric and the high (80 MHz) repetition rate enables this laser to be used in high throughput manufacturing processes. Microvias with minimum diameter of < 7 µm were fabricated in 5 µm thick ABF with small fillers and in 7 µm thick novel Panasonic low stress dielectric film-S (PLS-S), by using 355 nm picosecond UV laser tool. These ABF and PLS-S films are non-photosensitive dielectric materials. This is the first demonstration of very small microvias (< 7 µm) in polymer dielectrics using UV laser ablation. The motivation of this work is to address the high RDL interconnect density requirements for 2.5D interposer and high density (HD) fan-out packages. The next generation of low-cost, ultra-small microvias will (1) Increase the RDL I/O density, (2) Meet fine bump pitch requirements, (3) Reduce the metal layer count for package substrate RDL, (4) Fill the gap between semiconductor back-end-of-line (BEOL) process and semi-additive process (SAP) and thereby (5) Improve the packaging performance at lower costs.
基于激光和光刻技术的2.5D面板再分配层2-7微米的新一代超小微孔
Microvia是用于高密度互连(HDI)印刷电路板(pcb)、HDI封装基板、2.5D中间层和扇出封装中的多层再分布层(RDLs)的垂直互连结构。光刻、紫外激光和准分子激光三种技术已被用于在聚合物电介质中形成直径≤20 μ m的小微通孔。本文对上述三种技术进行了研究和比较。Photovia最初是由IBM引入的表面层流电路技术,它已经从125µm缩小到今天的10µm以下。通过在5µm厚的TOK光成像介质(PID) (IF4605)薄膜上使用365 nm光刻技术,证明了最小的光电通孔直径为2µm。直径3微米的光通孔也在5微米厚的Taiyo Ink介电干膜材料(PDM)中得到了验证,该材料通过了1500个热循环(-55℃至125℃)。光通孔技术的局限性在于光敏介电材料的可用性和成本,这些材料具有所需的电学、机械、热学和化学性能。采用传统高速紫外激光技术,最先进的微孔直径为20 μ m。在7µm厚的Ajinomoto构筑膜(ABF)上,利用准分子激光,通过1000个热循环(-55℃至125℃),同时制备了具有4µm特征尺寸的微通孔和沟槽的多层RDL。本文展示了一种新的皮秒紫外激光技术,通过优化激光参数和介电材料,突破了低成本紫外激光技术的极限。ESI的Cornerstone皮秒紫外激光工具能够在355nm波长下产生16W的输出功率。脉冲持续时间为5ps,最大限度地减少了聚合物电介质的热影响区,高(80 MHz)重复率使该激光器能够用于高吞吐量制造过程。利用355nm皮秒紫外激光工具,在7µm厚的新型松下低应力介电膜s (PLS-S)和5µm厚的ABF中制备了最小直径< 7µm的微孔。这些ABF和PLS-S薄膜是非光敏介电材料。这是使用紫外激光烧蚀在聚合物电介质中首次展示非常小的微通孔(< 7 μ m)。这项工作的动机是解决2.5D插口和高密度(HD)扇出封装的高RDL互连密度要求。下一代低成本、超小型微通孔将(1)提高RDL I/O密度,(2)满足微细凸距要求,(3)减少封装基板RDL的金属层数,(4)填补半导体后端线(BEOL)工艺和半增材工艺(SAP)之间的空白,从而(5)以更低的成本提高封装性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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