Influence of Front-Side Ag Metallization on High Temperature and High Humidity Test of Crystalline Silicon PV Module

Abstract

Regarding the crystalline Silicon Photovoltaic module in which the corrosion of the front-side metallization occurred form near the bus bars in the high temperature high humidity test, the state of the finger metallization after the test was observed. Corrosion of the glass of the metallization was confirmed as in the previous report. In addition, there was a gap between the bulk Ag and the glass layer. This gap can cause an increase in series resistance between the emitter and the finger bars. Sn was also detected from a part of the corroded metallization surface.