Extended Gate H+-Ion Sensitive Field Effect Transistor with Signal Interface

Chung-Yuan Chen, Hsiu-Li Hsieh, Chia-Hsien Lin, S. Liao, T. Sun, C. Ching, Po-Liang Liu
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引用次数: 4

Abstract

H + -ion concentration into digital form. This chip, fabricated in a 0.18-um CMOS 1P6M process, operated at a 1.8V supply voltage and normal sampling rate of 6.25MHz. The circuit (without pad) occupied an area of 0.66mm × 0.43mm. The experimental data showed that this structure has a linear pH response about 97 digital counts/pH in the ion concentration range between pH2 and pH12, and the gain errors within the H + -ion concentrations are less than 3%. The minimum detectable pH value can reach as small as ±0.25pH.
带信号接口的扩展栅氢离子敏感场效应晶体管
H +离子浓度转化为数字形式。该芯片采用0.18 um CMOS 1P6M工艺,工作在1.8V电源电压下,正常采样率为6.25MHz。电路(不含焊盘)的面积为0.66mm × 0.43mm。实验数据表明,该结构在pH2 ~ pH12离子浓度范围内具有97个数字计数/pH左右的线性pH响应,且在H +离子浓度范围内的增益误差小于3%。最小可检测pH值可小至±0.25pH。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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