p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions

Argyris Tilemachou, M. Zervos, A. Othonos, Th. Pavloudis, J. Kioseoglou
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引用次数: 7

Abstract

Cu3N with a cubic crystal structure is obtained in this paper by the sputtering of Cu under N2 followed by annealing under NH3: H2 at 400 °C, after which it was doped with iodine at room temperature resulting into p-type Cu3N with hole densities between 1016 and 1017 cm−3. The Cu3N exhibited distinct maxima in differential transmission at ~2.01 eV and 1.87 eV as shown by ultrafast pump-probe spectroscopy, corresponding to the M and R direct energy band gaps in excellent agreement with density functional theory calculations, suggesting that the band gap is clean and free of mid-gap states. The Cu3N was gradually converted into optically transparent γ-CuI that had a hole density of 4 × 1017 cm−3, mobility of 12 cm2/Vs and room temperature photoluminescence at 3.1 eV corresponding to its direct energy band gap. We describe the fabrication and properties of γ-CuI/TiO2/Cu3N and γ-CuI/Cu3N p-n heterojunctions that exhibited rectifying current-voltage characteristics, but no photogenerated current attributed to indirect recombination via shallow states in Cu3N and/or deep states in the γ-CuI consistent with the short (ps) lifetimes of the photoexcited electrons-holes determined from transient absorption–transmission spectroscopy.
p型碘掺杂Cu3N及其转化为γ-CuI制备γ-CuI/Cu3N p-n异质结
本文将Cu在N2下溅射,然后在400℃NH3: H2下退火,再在室温下掺杂碘,得到了具有立方晶体结构的p型Cu3N,其空穴密度在1016 ~ 1017 cm−3之间。超快泵浦探测光谱结果显示,Cu3N在~2.01 eV和1.87 eV处表现出明显的差透射最大值,对应于M和R直接能带隙,这与密度泛函理论计算结果非常吻合,表明带隙是干净的,没有中隙态。Cu3N逐渐转化为光学透明的γ-CuI,其空穴密度为4 × 1017 cm−3,迁移率为12 cm2/Vs,室温光致发光强度为3.1 eV,对应于其直接能带隙。我们描述了γ-CuI/TiO2/Cu3N和γ-CuI/Cu3N p-n异质结的制备和性能,这些异质结具有整流电流-电压特性,但由于Cu3N的浅态和γ-CuI的深态间接重组而没有光产生电流,这与瞬态吸收透射光谱测定的光激发电子空穴的短(ps)寿命一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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