Synthesis of Z-scheme heterostructure FeWO4/rGO/g-C3N4 as a visible-light photocatalyst for removal of organic pollutant

Douglas Tran, M. Dang, Chau Ngoc Chu, N. Nguyen, H. Do, Dong Thanh Pham, Viet Minh Nguyen, P. M. Nguyen
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Abstract

Photocatalysts have been effectively applied for water treatment. Narrow bandgap energy semiconductors show good photocatalytic performance at visible light. However, high recombination rate of the photogenerated electrons and holes leads to their low photocatalytic activity. Moreover, the conduction and valence band potentials of these materials are not suitable for the redox reactions with water and oxygen to generate HO• and •O2⁻ radicals, respectively. Therefore, the development of new photocatalyst systems to overcome these disadvantages is necessary. This study investigated the photocatalytic activity of FeWO4/rGO/g-C3N4 Z-scheme photocatalytic system via the degradation of Rhodamine B in water. The photocatalyst was synthesized by simple hydrothermal method and characterized by X-ray diffraction method (XRD), fluorescence spectroscopy (PL) and diffuse reflectance spectra (UV-vis). The results showed that after 150 minutes illumination, the Rhodamine B decomposition efficiency on FeWO4/g-C3N4 and FeWO4/rGO/g-C3N4 were 93.07 and 99.21%, respectively. These values were significantly higher than that of g-C3N4 under the same catalytic concentration of 0.1g/L. In the FeWO4/rGO/g-C3N4 heterostructure, rGO acted as electron mediator and transporter between two semiconductors, resulting in a lower recombination rate of photogenerated charges. As the results, the photocatalytic performance was enhanced.
z型异质结构FeWO4/rGO/g-C3N4的合成及其对有机污染物去除的可见光催化剂研究
光催化剂在水处理中得到了有效的应用。窄带隙能半导体在可见光下表现出良好的光催化性能。然而,光生电子和空穴的高复合率导致其光催化活性较低。此外,这些材料的传导电位和价带电位不适合与水和氧氧化还原反应,分别生成HO•和•O2⁻自由基。因此,开发新的光催化剂体系来克服这些缺点是必要的。研究了FeWO4/rGO/g-C3N4 Z-scheme光催化体系降解水中罗丹明B的光催化活性。采用简单水热法合成光催化剂,并用x射线衍射法(XRD)、荧光光谱法(PL)和漫反射光谱法(UV-vis)对其进行了表征。结果表明,光照150 min后,罗丹明B对FeWO4/g-C3N4和FeWO4/rGO/g-C3N4的分解效率分别为93.07和99.21%。在相同的催化浓度为0.1g/L时,这些数值显著高于g-C3N4。在FeWO4/rGO/g-C3N4异质结构中,rGO作为两个半导体之间的电子介质和传递体,导致光生电荷的复合率较低。结果表明,光催化性能得到了提高。
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