Direct Bonding Silver to Aluminum Using Eutectic Reaction in Air

Shao-Wei Fu, Chin C. Lee
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引用次数: 2

Abstract

The high thermal conductivity, light weight, and low cost of aluminum (Al) make it a promising substrate material for high power electronic packaging. Recently, direct bond aluminum (DBA) substrate has received significant attention as a possible alternative to direct bond copper (DBC) substrate which seems to have thermal cycling reliability issues. A main challenge of using aluminum substrates in electronic packaging is the poor bondability. The native aluminum oxide layer prevents aluminum from forming bonding with die-attach materials or metallization layers. Thus, zincating process is required to dissolve the aluminum oxide and deposit a protective layer of zinc, which provides a basis for subsequent metallization. In this research, Ag-Al eutectic bonding has been developed as a novel bonding technique to direct bond Ag to Al substrate. The shear strength of the Ag-Al joints passes military criterion (MIL-STD-883H method 2019.8) with a large margin. SEM and TEM analyses were utilized to study the microstructures in details. The results reveal that eutectic structure of Ag2Al and (Al) phase forms at the Ag/Al bonding interface. A uniform Ag2Al compound layer was observed between the eutectic structure and Ag region, with no Ag3Al compound detected. In the Ag-Al eutectic reaction process, the aluminum oxide layer was broken into pieces and dispersed into the eutectic structure region. To investigate the fracture modes of Ag-Al eutectic joints, the fracture surfaces of Ag-Al joints were evaluated after the shear test. The fracture surfaces correspond to a typical ductile fracture with plastic deformation and drawing matrix. An application of this new technique is to bond Ag foils to Al substrates and make them bondable to die-attach materials such as solders and nano-silver paste. At a more advanced level, device chips can be bonded to the Ag foil on Al substrates at 300 °C using solid state bonding technique. This foil bonding application provides an alternative to the zincating and metallization processes on aluminum substrates. Other potential applications include making Al surfaces easier to blaze to other metals such as brass and copper.
用空气共晶反应直接键合银与铝
铝的高导热性、重量轻、成本低等特点使其成为大功率电子封装的衬底材料。最近,直接键合铝(DBA)衬底作为直接键合铜(DBC)衬底的可能替代品受到了广泛的关注,而直接键合铜(DBC)衬底似乎存在热循环可靠性问题。在电子封装中使用铝基板的主要挑战是粘合性差。天然氧化铝层防止铝与模附材料或金属化层形成粘合。因此,镀锌工艺需要将氧化铝溶解,并沉积一层锌保护层,为后续的金属化提供基础。在本研究中,Ag-Al共晶键合是一种将Ag直接键合到Al衬底上的新型键合技术。Ag-Al接头抗剪强度通过军用标准(MIL-STD-883H方法2019.8),裕量较大。利用扫描电镜和透射电镜对其微观组织进行了详细研究。结果表明,在Ag/Al键合界面处形成了Ag2Al和(Al)相共晶结构。在共晶结构和Ag区之间有一层均匀的Ag2Al化合物层,未检测到Ag3Al化合物。在Ag-Al共晶反应过程中,氧化铝层破碎分散到共晶结构区。为了研究Ag-Al共晶接头的断裂方式,在剪切试验后对Ag-Al接头断口进行了评价。断口为典型的塑性变形、拉伸基体的韧性断口。这项新技术的一个应用是将银箔粘合到铝衬底上,并使其可粘合到模贴材料上,如焊料和纳米银浆料。在更高级的水平上,器件芯片可以在300°C下使用固态键合技术与Al衬底上的Ag箔结合。这种箔粘合应用为铝基板上的镀锌和金属化工艺提供了一种替代方法。其他潜在的应用包括使铝表面更容易烧成其他金属,如黄铜和铜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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