The scaling of data sensing schemes for high speed cache design in sub-0.18 /spl mu/m technologies

K. Zhang, K. Hose, V. De, B. Senyk
{"title":"The scaling of data sensing schemes for high speed cache design in sub-0.18 /spl mu/m technologies","authors":"K. Zhang, K. Hose, V. De, B. Senyk","doi":"10.1109/VLSIC.2000.852898","DOIUrl":null,"url":null,"abstract":"Small signal differential data sensing for on-chip cache design is evaluated from the perspective of technology scaling. Maintaining the delay scaling trend and high area efficiency is getting more difficult with the conventional scheme as Si process technology moves beyond 0.18 /spl mu/m. An alternative design scheme with large signal sensing is proposed and proven to be a viable design alternative in the deep sub-micron regime.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"39 1","pages":"226-227"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"49","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 49

Abstract

Small signal differential data sensing for on-chip cache design is evaluated from the perspective of technology scaling. Maintaining the delay scaling trend and high area efficiency is getting more difficult with the conventional scheme as Si process technology moves beyond 0.18 /spl mu/m. An alternative design scheme with large signal sensing is proposed and proven to be a viable design alternative in the deep sub-micron regime.
在低于0.18 /spl mu/m技术下高速缓存设计的数据感知方案的缩放
从技术尺度的角度对片上缓存设计中的小信号差分数据感知进行了评价。随着硅制程技术超过0.18 /spl mu/m,传统方案越来越难以保持延迟缩放趋势和高面积效率。提出了一种具有大信号传感的替代设计方案,并证明在深亚微米区域是一种可行的设计方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信