1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.968845

Hideki Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai

引用次数: 1

Abstract

We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.

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采用CH/sub /H/sub / 2/干刻蚀和再生制备1.5 /spl μ m波长GaInAsP/InP 5层量子线激光器

报道了线宽为23nm的SC - 5层q线激光器的激光特性。在阈值以下的自发发射效率几乎与高达85℃的q膜激光器相当，显示出蚀刻/再生界面的低损伤特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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