Photoluminescence Studies on Nanocrystalline Tin Oxide Powder for Optoelectronic Devices

L. C. Nehru, V. Swaminathan, C. Sanjeeviraja
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引用次数: 83

Abstract

Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.
光电器件用纳米氧化锡粉的光致发光研究
采用低温化学沉淀法合成了纳米氧化锡粉体。通过XRD、SEM和发光研究对制备和加热后的粉末进行了表征。采用Rietveld分析方法计算了SnO2纳米晶粉末的晶体尺寸、晶格参数和位错密度等晶体学参数。通过控制热处理工艺,获得了SnO2粉末的平均晶粒尺寸为9 ~ 43 nm。洗后的粉末形貌接近球形,平均团聚晶粒尺寸在0.2 ~ 0.4 μm之间。对制备的粉末和退火后的粉末在265 nm的激发波长下进行了光致发光(PL)研究;所有粉末均在417 nm处有宽发射峰。在500℃退火时,粉末的发光强度最高。所合成的氧化锡纳米晶半导体材料可用于制作光电和传感器器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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