{"title":"Photoluminescence Studies on Nanocrystalline Tin Oxide Powder for Optoelectronic Devices","authors":"L. C. Nehru, V. Swaminathan, C. Sanjeeviraja","doi":"10.5923/J.MATERIALS.20120202.02","DOIUrl":null,"url":null,"abstract":"Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.","PeriodicalId":7420,"journal":{"name":"American Journal of Materials Science","volume":"115 1","pages":"6-10"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"83","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"American Journal of Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5923/J.MATERIALS.20120202.02","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 83
Abstract
Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.