Insulator to metal transition in VO2 M1+B phase on silicon substrate

S. R. Sahu, S. Majid, K. Gautam, R. Choudhary, V. Sathe, D. Shukla
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引用次数: 1

Abstract

Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO2 M1 and the VO2 B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO2 M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO2 is due to strain in the thin film.Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO2 M1 and the VO2 B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO2 M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO2 is due to strain in the thin film.
硅衬底上vo2m1 +B相绝缘体到金属的转变
本文报道了在Si衬底上脉冲激光沉积(PLD)生长薄膜的x射线衍射(XRD)、温度相关电阻率和拉曼测量。XRD证实在室温下存在VO2 M1和VO2 B两种单斜相。电阻率测量显示出从低温绝缘相到高温金属相的转变,表明vo2m1相的主要贡献。发现绝缘体到金属的转变(IMT)发生在~ 328 K,比体VO2低~ 12 K。拉曼测量证实了一阶结构相变,从低温单斜向高温金红石,伴随着IMT。薄膜中转变温度的降低与大块VO2相比是由于薄膜中的应变。本文报道了在Si衬底上脉冲激光沉积(PLD)生长薄膜的x射线衍射(XRD)、温度相关电阻率和拉曼测量。XRD证实在室温下存在VO2 M1和VO2 B两种单斜相。电阻率测量显示出从低温绝缘相到高温金属相的转变,表明vo2m1相的主要贡献。发现绝缘体到金属的转变(IMT)发生在~ 328 K,比体VO2低~ 12 K。拉曼测量证实了一阶结构相变,从低温单斜向高温金红石,伴随着IMT。薄膜中转变温度的降低与大块VO2相比是由于薄膜中的应变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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