Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation

Abstract

Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and $10^{-8}\Omega-\mathrm{cm}^{2}$ specific contact resistance), mechanical strength $(> 15\mathrm{kgf})$, and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.