Development of sputtering technology of Ta2O5/TaOx stacked film for ReRAM mass-production

Abstract

This paper deals with development of sputtering technology of Ta₂O₅/TaO_x stacked film for ReRAM mass-production. Thickness of TaO_x film deposited by sputtering process is possible to obtain with good uniformity. However, if a high deposition rate is required for mass production, it is very difficult to obtain good controllability and uniformity of TaO_x film. These problems affect the switching characteristics of the ReRAM. In order to solve these problems, sputtering tool and process for ReRAM mass-production are developed. We report the result of TaO_x film with good resistance uniformity and controllability and deposition stability without low deposition rate. Moreover, switching characteristics of Pt/Ta₂O₅/TaO_x/Pt-ReRAM-cells are evaluated.