In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs

I. De Wolf, V. Simons, V. Cherman, R. Labie, B. Vandevelde, E. Beyne
{"title":"In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs","authors":"I. De Wolf, V. Simons, V. Cherman, R. Labie, B. Vandevelde, E. Beyne","doi":"10.1109/ECTC.2012.6248851","DOIUrl":null,"url":null,"abstract":"This paper discusses mechanical stress measured with micro-Raman spectroscopy in the silicon substrate near Cu-Through Silicon Vias (TSV). A discussion of the relation between the observed Raman shift and the various stress tensor components is given, showing that this relation is often wrongly applied, and that in many cases the compressive stress along the vertical axis of the TSV, dominates the Raman results and hides the tensile axial component which is of most relevance for its impact on CMOS devices. The effect of measurement depth, TSV depth and density, and an oxide cap is shown. Both surface and cross-sectional results are discussed. Also a direct correlation between results from Raman measurements and electrical results from FET-arrays near a TSV is given.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 62nd Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2012.6248851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40

Abstract

This paper discusses mechanical stress measured with micro-Raman spectroscopy in the silicon substrate near Cu-Through Silicon Vias (TSV). A discussion of the relation between the observed Raman shift and the various stress tensor components is given, showing that this relation is often wrongly applied, and that in many cases the compressive stress along the vertical axis of the TSV, dominates the Raman results and hides the tensile axial component which is of most relevance for its impact on CMOS devices. The effect of measurement depth, TSV depth and density, and an oxide cap is shown. Both surface and cross-sectional results are discussed. Also a direct correlation between results from Raman measurements and electrical results from FET-arrays near a TSV is given.
深入的拉曼光谱分析了影响cu - tsv近表面和体积机械应力的各种参数
本文讨论了用微拉曼光谱测量Cu-Through silicon Vias (TSV)附近硅衬底的机械应力。讨论了观察到的拉曼位移与各种应力张量分量之间的关系,表明这种关系经常被错误地应用,并且在许多情况下,沿TSV垂直轴的压应力主导了拉曼结果,并隐藏了与CMOS器件影响最相关的拉伸轴分量。考察了测量深度、TSV深度和密度、氧化帽等因素的影响。讨论了表面和截面结果。此外,还给出了拉曼测量结果与TSV附近场效应管阵列的电学结果之间的直接相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信