O. Vasylyev, M. Brychevskyi, I. Brodnikovskyi, L. Dubykivskyi, M. Andrzejczuk, M. Spychalski, M. Lewandowska, K. Kurzydłowski, R. Steinberger‐Wilckens, J. Mertens, J. Malzbender
{"title":"On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate","authors":"O. Vasylyev, M. Brychevskyi, I. Brodnikovskyi, L. Dubykivskyi, M. Andrzejczuk, M. Spychalski, M. Lewandowska, K. Kurzydłowski, R. Steinberger‐Wilckens, J. Mertens, J. Malzbender","doi":"10.1109/OMEE.2012.6464786","DOIUrl":null,"url":null,"abstract":"Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with “defective layer by defective layer” mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as “dense layer by dense layer”. Deposition affected zone (DAZ) is clearly distinguished.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"2 1","pages":"92-93"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with “defective layer by defective layer” mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as “dense layer by dense layer”. Deposition affected zone (DAZ) is clearly distinguished.