{"title":"Large-scale preparation of ternary BiSbTe films with enhanced thermoelectric properties using DC magnetron sputtering","authors":"W. Fang, K. Liou, M. Leu","doi":"10.1109/IMPACT.2009.5382216","DOIUrl":null,"url":null,"abstract":"Large-scale synthesis of BiSbTe films with enhanced electrical property and Seebeck coefficient has been demonstrated in this work. As-grown BiSbTe films are found to have lower carrier concentration and higher electron mobility after the post annealing fulfilled. From the resultant high-resolution transmission electron microscope (HRTEM) images, the phenomenon of annealinginduced preferential Sb diffusion is corroborated to elaborate the reason why electrical properties could be improved. Moreover, the precipitation of Sb-rich phase is embedded in the thermally-treated BiSbTe films. Such the feasibility of large-scale fabrication of BiSbTe films with the elevated power factor is evidenced and this is very promising in the realization of room-temperature thermoelectric (TE) applications with high performances.","PeriodicalId":6410,"journal":{"name":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","volume":"1 1","pages":"457-460"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2009.5382216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Large-scale synthesis of BiSbTe films with enhanced electrical property and Seebeck coefficient has been demonstrated in this work. As-grown BiSbTe films are found to have lower carrier concentration and higher electron mobility after the post annealing fulfilled. From the resultant high-resolution transmission electron microscope (HRTEM) images, the phenomenon of annealinginduced preferential Sb diffusion is corroborated to elaborate the reason why electrical properties could be improved. Moreover, the precipitation of Sb-rich phase is embedded in the thermally-treated BiSbTe films. Such the feasibility of large-scale fabrication of BiSbTe films with the elevated power factor is evidenced and this is very promising in the realization of room-temperature thermoelectric (TE) applications with high performances.