7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

Abstract

In this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA) nanosheet transistors with a record number of stacked channels. Seven levels stacked nanosheet (NS) GAA transistors fabricated using a replacement metal gate process, inner spacer and self-aligned contacts show an excellent gate controllability with extremely high current drivability $(3\mathrm{mA}/\mu \mathrm{m}\ \mathrm{at}\ \mathrm{V}_{\mathrm{DD}}=1\mathrm{V})$ and a 3 x improvement in drain current over usual 2 levels stacked- NS GAA transistors.