G. Giustolisi, G. Palumbo, P. Finocchiaro, A. Pappalardo
{"title":"Verilog-a modeling of Silicon Photo-Multipliers","authors":"G. Giustolisi, G. Palumbo, P. Finocchiaro, A. Pappalardo","doi":"10.1109/ISCAS.2016.7527479","DOIUrl":null,"url":null,"abstract":"The Silicon Photomultiplier (SiPM) is a promising kind of device able to detect single photons thus permitting the measurement of weak optical signals. The design of high-performance front-end electronics for the read-out, require an accurate model of the SiPM. In this paper we propose a new SiPM model implemented through the behavioral language Verilog-a and suitable for transistor-level circuit simulation. The model is based on a traditional electrical model and a statistical modeling to implement the SiPM noise characteristic in terms of dark-count and after-pulsing phenomena. We also provide a procedure for extracting the model parameters from measurements and validate both the extraction procedure and the Verilog-a model by comparing simulations to measurement results.","PeriodicalId":6546,"journal":{"name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"6 1","pages":"1270-1273"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2016.7527479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The Silicon Photomultiplier (SiPM) is a promising kind of device able to detect single photons thus permitting the measurement of weak optical signals. The design of high-performance front-end electronics for the read-out, require an accurate model of the SiPM. In this paper we propose a new SiPM model implemented through the behavioral language Verilog-a and suitable for transistor-level circuit simulation. The model is based on a traditional electrical model and a statistical modeling to implement the SiPM noise characteristic in terms of dark-count and after-pulsing phenomena. We also provide a procedure for extracting the model parameters from measurements and validate both the extraction procedure and the Verilog-a model by comparing simulations to measurement results.