High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate

Abstract

A new single-crystal silicon growth method for fabricating high-performance thin-film transistors (TFTs) was developed. High-performance TFTs - with an 8-/spl mu/m-wide and 20-/spl mu/m-long single-crystal silicon region and a field-effect mobility of 580 cm/sup 2//Vs for the n-channel and 330 cm/sup 2//Vs for the p-channel - were fabricated below 450/spl deg/C on a 300/spl times/300 mm/sup 2/ non-alkali glass substrate.