Spanning the spectrum of interconnects from trenches of double patterning to system level

N. Nagaraj
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Abstract

Summary form only given. This talk covers the fascinating aspects of the whole spectrum of interconnects from trenches of silicon in nanometers to multi-millimeter long wires at system level and how common principles govern them. This talk starts at the silicon level, where double and triple patterning is becoming more common at lower level interconnects and these offer unique challenges and opportunities in manufacturability, variability and signal/power integrities. Then, it covers the CMP and inter-layer variation induced challenges and opportunities at global interconnects in silicon and expands to interposer and TSV aspects. This is followed by package and board level challenges and opportunities in manufacturability, electromagnetic interference and signal/power integrities. A concept of `Interconnect Continuum' is introduced to show how viewing the whole spectrum in continuity helps in optimizing performance, power, cost and overall reliability.
跨越从双模式沟槽到系统级互连的频谱
只提供摘要形式。这次演讲涵盖了从纳米级硅沟槽到系统级多毫米长的电线的整个互连频谱的迷人方面,以及如何共同原则支配它们。本次演讲从硅级开始,双模式和三模式在较低级别互连中变得越来越普遍,这些在可制造性,可变性和信号/功率完整性方面提供了独特的挑战和机遇。然后,它涵盖了硅全球互连中CMP和层间变化引起的挑战和机遇,并扩展到中间体和TSV方面。其次是封装和板级在可制造性、电磁干扰和信号/电源完整性方面的挑战和机遇。引入了“互连连续体”的概念,展示了如何连续查看整个频谱有助于优化性能、功耗、成本和整体可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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